Silicon
in latin: silex
Structure
Properties
Phase solid
| Melting point | 1687 K (1414 °C, 2577 °F) |
| Boiling point | 3538 K (3265 °C, 5909 °F) |
| Density near r.t. | 2.3290 g/cm3 |
| when liquid, at m.p. | 2.57 g/cm3 |
| Heat of fusion | 50.21 kJ/mol |
| Heat of vaporization | 383 kJ/mol |
| Molar heat capacity | 19.789 J/(mol·K) |
Applications
-building materials
-ceramics and glass
-artificial silicon compounds
Gallium Arsenide
Compound of the elements gallium and arsenic
Structure
Properties
Phase solid
| Melting point | 1,238 °C (2,260 °F; 1,511 K) |
| Boiling point | |
| Density near r.t. | 5.3176 g/cm3 |
| when liquid, at m.p. | |
| Heat of fusion | |
| Heat of vaporization | |
| Molar heat capacity |
Applications
-solar cells and detectors
-light-emission devices
-fiber optic temperature measurement
-spin-charge converters
Gallium Phosphide
Structure
Properties
Phase solid
| Melting point | 1,477 °C (2,691 °F; 1,750 K) |
| Solubility in water | insoluble |
| Density near r.t. | 4.138 g/cm3 |
| Band gap | 2.26 eV (300 K) |
| Electron mobility | 250 cm2/(V*s) (300 K) |
| Thermal conductivity | 1.1 W/(cm*K) (300 K) |
| Refractive index |
3.02 (2.48 µm), 3.19 (840 nm), 3.45 (550 nm), 4.30 (262 nm) |
Applications
-LED lights (infared)
Indium
Structure
Properties
Phase solid
Melting point 429.7485 K (156.5985 °C, 313.8773 °F)
Boiling point 2345 K (2072 °C, 3762 °F)
Density near r.t. 7.31 g/cm3
when liquid, at m.p. 7.02 g/cm3
Heat of fusion 3.281 kJ/mol
Heat of vaporization 231.8 kJ/mol
Molar heat capacity 26.74 J/(mol·K)
Applications
-Electronics, metal and alloys
Zinc Sulfide
Structure
Properties
| Chemical formula | ZnS |
| Molar mass | 97.474 g/mol |
| Density | 4.090 g/cm3 |
| Melting point | 1,185 °C (2,165 °F; 1,458 K) (sublime) |
| Solubility in water | negligible |
| Band gap | 3.54 eV (cubic, 300 K) 3.91 eV (hexagonal, 300 K) |
Applications
-Luminescent material
-optical material
-pigment
-catalyst
Aluminum Gallium Arsenide
Structure
Properties
Phase solid
| Melting point | 1,238 °C (2,260 °F; 1,511 K) |
| Solubility in water | insoluble |
| Density near r.t. | 5.3176 g/cm3 |
| Band gap | 1.441 eV (at 300 K) |
| Electron mobility | 9000 cm2/(V·s) (at 300 K) |
| Thermal conductivity | 0.56 W/(cm·K) (at 300 K) |
| Refractive index | 3.3 |
Applications
-Barrier material in laser diodes
-monolithic microwave integrated circuits
-solar cells
-optical windows
Boron Arsenide
Structure
Properties
| Chemical formula | BAs or B12As2 |
| Molar mass | 85.733 g/mol |
| Density | 5.22 g/cm3, solid |
| Melting point | 2,027 °C (3,681 °F; 2,300 K) |
| Solubility in water | Insoluble |
| Band gap | 1.50 eV(BAs); 3.47 eV(B12As2) |
Applications
-Solar cell fabrication
CZTS
Copper Zinc Tin Sulfide
Structure
Properties
| Chemical formula | Cu2ZnSnS4 |
| Molar mass | 439.471 g/mol |
| Appearance | Greenish black crystals |
| Density | 4.56 g/cm3 |
| Melting point | 990 °C (1,810 °F; 1,260 K) |
| Band gap | 1.4–1.5 eV |
Applications
-Development of solar cells
PZT
Lead Zirconate Titante
Structure
Properties
| Chemical formula | Pb[ZrxTi1-x]O3 (0≤x≤1) |
| Molar mass | 303.065 to 346.4222 g/mol |
Applications
-Ultrasound transducers, sensors, actuators, high-value ceramic capacitators, FRAM chips, ceramic resonators